| 书目名称 | Computer-Aided Design and VLSI Device Development | | 编辑 | Kit Man Cham,Soo-Young Oh,Daeje Chin | | 视频video | | | 丛书名称 | The Springer International Series in Engineering and Computer Science | | 图书封面 |  | | 描述 | examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters | | 出版日期 | Book 1988Latest edition | | 关键词 | CMOS; MOSFET; VLSI; computer; development; interconnect; simulation; transistor | | 版次 | 2 | | doi | https://doi.org/10.1007/978-1-4613-1695-4 | | isbn_softcover | 978-1-4612-8956-2 | | isbn_ebook | 978-1-4613-1695-4Series ISSN 0893-3405 | | issn_series | 0893-3405 | | copyright | Kluwer Academic Publishers, Boston 1988 |
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发表于 2025-3-21 17:38:37
