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Titlebook: Computer Simulation of Ion-Solid Interactions; Wolfgang Eckstein Book 1991 Springer-Verlag Berlin Heidelberg 1991 Computersimulation.Dynam

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楼主: McKinley
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Thermal Vibrations and Specific Energies,This chapter deals with input data necessary for simulations. The positions of the atoms in the crystal structure of a target are not fixed, because of lattice vibrations. The temperature-dependent excursions from the lattice sites have to be determined. The theoretical background of lattice vibrations is discussed in [6.1].
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Interaction Potentials, to keep in mind that this is an assumption that is reasonably well justified at high energies but may not be as good at very low energies. Nevertheless, this concept is very convenient and therefore used in all computer simulations discussed in this book.
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Programs Based on the BCA Model,ater . and . [7.2] found channelling by computer simulation with a BCA program. Because of this success many programs have since been developed. The basic differences between these programs will be discussed in this chapter.
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Backscattering,ctile energies from about 100 keV to the MeV region for the analysis of the first 500 nm of a solid, while in ion surface spectrometry (ISS) it is used for investigations of processes at the topmost layer of a solid with projectile energies around 1 keV.
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Introduction,wn under the names implantation, ranges, backscattering or reflection, and transmission. So far the projectiles have been discussed, but that is only one part of the process. The elastic energy lost by a projectile in a collision is transferred to a target or recoil atom, which itself collides with
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Classical Dynamics Model,to additional terms in the equations of motion and therefore ensembles other than the microcanonical. Even more choices are possible [3.9] but they are mainly used in the simulation of liquids, phase transformations and the like.
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Trajectories, [9.18,19] and in BeO [9.20], by . in Cu [9.21], by . and . in Au [9.22], by . and . [9.23], by . and . in Cu [9.24], by . and coworkers [9.25–27] and by . in Si [9.28]. . et al. [9.29] and . et al. [9.30] show the development of trajectories with different generations. Examples of trajectories in c
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