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Titlebook: Chemistry and Physics of Solid Surfaces VIII; Ralf Vanselow,Russell Howe Textbook 1990 Springer-Verlag Berlin Heidelberg 1990 LEEM.STM.Sur

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书目名称Chemistry and Physics of Solid Surfaces VIII
编辑Ralf Vanselow,Russell Howe
视频videohttp://file.papertrans.cn/225/224802/224802.mp4
丛书名称Springer Series in Surface Sciences
图书封面Titlebook: Chemistry and Physics of Solid Surfaces VIII;  Ralf Vanselow,Russell Howe Textbook 1990 Springer-Verlag Berlin Heidelberg 1990 LEEM.STM.Sur
描述This volume contains review articles written by the invited speakers at the ninth International Summer Institute in Surface Science (ISISS 1989), held at the Uni­ versity of Wisconsin-Milwaukee in August of 1989. During the course of ISISS, invited speakers, all internationally recognized experts in the various fields of surface science, present tutorial review lectures. In addition, these experts are asked to write review articles on their lecture topic. Former ISISS speakers serve as advisors concerning the selection of speakers and lecture topics. Emphasis is given to those areas which have not been covered in depth by recent Summer Institutes, as well as to areas which have recently gained in significance and in which important progress has been made. Because of space limitations, no individual volume of Chemistry and Physics of Solid Surfaces can possibly cover the whole area of modern surface science, or even give a complete survey of recent progress in this field. However, an attempt is made to present a balanced overview in the series as a whole. With its comprehensive literature references and extensive subject indices, this series has become a valuable resource for expert
出版日期Textbook 1990
关键词LEEM; STM; Surface chemistry; chemistry; diffraction; materials science; surface; surface physics; surface s
版次1
doihttps://doi.org/10.1007/978-3-642-75762-4
isbn_softcover978-3-642-75764-8
isbn_ebook978-3-642-75762-4Series ISSN 0931-5195 Series E-ISSN 2198-4743
issn_series 0931-5195
copyrightSpringer-Verlag Berlin Heidelberg 1990
The information of publication is updating

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Low Energy Electron Microscopy,re .. is the energy of the electrons at the specimen. Typical energy values are . = . = 15−20 keV for the fast electrons and 0 < .. < 50 eV at the specimen. There are three fundamental quantities which are important in LEEM: resolution, intensity and contrast. These will be discussed in Sect. 12.1.
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Studying Surface Chemistry Atom-by-Atom Using the Scanning Tunneling Microscope,lation be made between the chemical behavior of a particular site and its local electronic structure. Thus, ideally one needs a surface technique or techniques which will allow the study of the topography and valence electronic structure of surfaces with atomic resolution.
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Textbook 1990ern surface science, or even give a complete survey of recent progress in this field. However, an attempt is made to present a balanced overview in the series as a whole. With its comprehensive literature references and extensive subject indices, this series has become a valuable resource for expert
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https://doi.org/10.1007/978-1-4842-9675-2 radius of less than 10. Å, provided dielectric breakthrough is avoided by working in ultrahigh vacuum. The upper limit of electric field strength that can be maintained over macroscopic distances is dictated by the onset of field emission and field evaporation, and is of the order of 6 V/Å.
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Quantitative Trading Strategies Using Pythones Gleick [8.15] which has gone a long way towards making the concept of chaos a household word, but in a scientifically and/or mathematically enlightened way. Still, one may wonder if and how this explosion of colorful pictures [8.16] and frequently humorous (e.g., “The Chaotic Behavior of the Leak
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Consciousness and Introspectionre .. is the energy of the electrons at the specimen. Typical energy values are . = . = 15−20 keV for the fast electrons and 0 < .. < 50 eV at the specimen. There are three fundamental quantities which are important in LEEM: resolution, intensity and contrast. These will be discussed in Sect. 12.1.
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https://doi.org/10.1007/978-1-4899-0629-8ce processes ultimately requires a characterization of real surfaces on an atomic scale. A Kossel model of a real surface is depicted in Fig. 13.1, showing schematically a binary surface with several kinds of structural defects.
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