找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: CMOS 60-GHz and E-band Power Amplifiers and Transmitters; Dixian Zhao,Patrick Reynaert Book 2015 Springer International Publishing Switzer

[复制链接]
楼主: children
发表于 2025-3-26 22:08:43 | 显示全部楼层
Conclusion and Outlook,The global bandwidth shortage has motivated the exploration of the mm-Wave spectrum (i.e., 30–300 GHz) for future multi-Gb/s wireless communications. To tackle design challenges at mm-Wave and meet the needs of low-cost mass market (presented in Chap. .), design innovations have to be developed in low-cost high-yield CMOS technologies.
发表于 2025-3-27 01:06:30 | 显示全部楼层
mm-Wave Active and Passive Devices, of offering high-speed transistors, the advanced CMOS technology usually provides several RF and mm-Wave friendly options, such as thick top metals and the silicon substrate with resistivity of 10 . cm. All these features enable the integration of the complete mm-Wave system on a single CMOS die.
发表于 2025-3-27 08:13:43 | 显示全部楼层
mm-Wave Broadband Direct-Conversion TX Towards 10+Gb/s,X is partially limited by the relatively large LO leakage. To facilitate the multi-Gb/s complex digital modulation (i.e., ​16-QAM or 64-QAM) at mm-Wave, the major challenges at the transmitter side are to minimize the LO leakage power and I/Q imbalance over the transmission band.
发表于 2025-3-27 13:26:41 | 显示全部楼层
发表于 2025-3-27 17:27:28 | 显示全部楼层
978-3-319-36971-6Springer International Publishing Switzerland 2015
发表于 2025-3-27 18:05:03 | 显示全部楼层
发表于 2025-3-27 23:24:17 | 显示全部楼层
Thomas Vasileiadis,Spyros N. Yannopoulos of offering high-speed transistors, the advanced CMOS technology usually provides several RF and mm-Wave friendly options, such as thick top metals and the silicon substrate with resistivity of 10 . cm. All these features enable the integration of the complete mm-Wave system on a single CMOS die.
发表于 2025-3-28 03:55:27 | 显示全部楼层
发表于 2025-3-28 08:57:50 | 显示全部楼层
Hiroshi Eto,Takehiro Ito,Eiji Miyano,Akira Suzuki,Yuma TamuraTo present large quantities of computer output in an intelligible and efficient way is a difficult task, for which I have found no really satisfactory solution. Chapters III and IV, in particular, contain almost exclusively this type of presentation. The reader may find these chapters somewhat tedio
发表于 2025-3-28 14:11:59 | 显示全部楼层
Textbook 1987Latest edition oder Ionenbindung 26 3. 1. 1. Grundlagen . . . . . . . . . . . 26 3. 1. 2. Die Bildung eines Ionengitters . . . 27 3. 2. Die kovalente Bindung oder Atombindung 28 3. 2. 1. Grundlagen . . . . . . . . . . . 28 3. 2. 2. Näherungsverfahren zur quantitativen Berechnung der kovalenten Bindung . . . . . .
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-5 05:42
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表