Titlebook: Analysis of Charge Transport; A Mathematical Study Joseph W. Jerome Book 1996 Springer-Verlag Berlin Heidelberg 1996 Abweichungs-Diffusions

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Book 1996d the Gummel map. Compu­ tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras­ nosel‘skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz i

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ing, termed the Gummel map. Compu­ tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras­ nosel‘skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz i978-3-642-79989-1978-3-642-79987-7

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Development of Drift-Diffusion Modelsand negative ions. The net charge at any point in the device is obtained by combining the ions with the free electron and hole carriers. Thus, an electric field is created via the first Maxwell equation, often called the Poisson equation in the theory of electrostatics. There are also quantum mechan

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Numerical Fixed Point Approximation in Banach Space-diffusion model. Iteration with this mapping . defines an algorithm for the solution of the drift-diffusion model, typically termed Gummel iteration in the literature. It is really Picard iteration for the map .. The Lipschitz constant has been examined in detail in Chap. 4.

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Introduction and mathematicians now accept nonlinear systems of the scope developed here as basic for the analysis and prediction of the processes of charge transport, in a self-consistently determined electric field. In this brief introductory chapter, we shall expand upon the remarks of the preface, and discu

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Development of Drift-Diffusion Models, depending upon controlling currents or voltages elsewhere in the element. A junction occurs when regions with contrasting doping characteristics abut in a semiconductor. Thus, a p-region is one with an excess of free hole carriers and an n-region, on the other hand, contains an excess of free elec

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