Titlebook: A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs; Ana Paula Pinto Correia,Pedro Miguel Cândido Barqu Book 2016 The Author(s) 2016 Analog to

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Book 2016s given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates..

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H. Michael Tucker PHD,Steven Estus PHDcount that the devices explored in this work use an oxide semiconductor (indium-gallium-zinc oxide, IGZO) and an high- › dielectric (based on Ta2O5 and SiO2), a brief overview and historical context regarding TSOs and high-› dielectrics is also provided.

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Book 2016ors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout i

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2191-8112 on and characterization to their integration in relatively c.This books discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electro

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Paul Peixoto,Michaël Guittaut,Eric Hervouets provided. Then, it presents a detailed discussion on the characterization of sputtered amorphous multicomponent high-κ dielectrics based on Ta.O. and SiO., using single and multilayer structures, and their integration in indium-gallium-zinc oxide (IGZO) TFTs. Finally, an existing model for a-Si:H TFTs is adapted to IGZO TFTs technology.

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Gil Mor,Michele K. Montagna,Ayesha B. Alveroon to the comparator, the active block in the circuit. The circuits are simulated using commercial electronic design automation (EDA) tools, which will be briefly referred. Furthermore, some layout considerations and hints for a successful fabrication are also provided.