找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

SCIE期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 2024/2025影响因子:2.332 (IEEE T SEMICONDUCT M) (0894-6507). (PHYSICS

[复制链接]
查看: 47823|回复: 35
发表于 2025-3-21 18:47:30 | 显示全部楼层 |阅读模式
期刊全称IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
期刊简称IEEE T SEMICONDUCT M
影响因子20242.332
视频video
ISSN0894-6507
eISSN1558-2345
出版商IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
发行地址445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
学科分类1.Science Citation Index Expanded (SCIE)--Engineering, Manufacturing | Engineering, Electrical & Electronic | Physics, Applied | Physics, Condensed Matter; 2.Current Contents Electronics & Telecommunications Collection--Semiconductors & Solid State Materials Technology; 3.Current Contents Engineering, Computing & Technology--Electrical & Electronics Engineering; 4.Essential Science Indicators--Engineering;
出版语言English
The information of publication is updating

SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(20 21 REV HIST)影响因子


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(IEEE T SEMICONDUCT M)影响因子@(应用物理学)学科排名


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(20 21 REV HIST)总引论文


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(IEEE T SEMICONDUCT M)总引论文@(应用物理学)学科排名


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(20 21 REV HIST)影响因子


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(IEEE T SEMICONDUCT M)总引频次@(应用物理学)学科排名


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(20 21 REV HIST)即时影响因子


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(IEEE T SEMICONDUCT M)即时影响因子@(应用物理学)学科排名


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(20 21 REV HIST)五年累积影响因子


SCIE(SCI)期刊IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING(IEEE T SEMICONDUCT M)五年累积影响因子@(应用物理学)学科排名


单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 22:18:04 | 显示全部楼层
Submitted on: 02 December 2017. Revised on: 21 January 2018. Accepted on: 10 March 2018. ___________________IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
发表于 2025-3-22 01:01:57 | 显示全部楼层
Submitted on: 10 May 2009. Revised on: 07 July 2009. Accepted on: 26 August 2009. ___________________IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
发表于 2025-3-22 07:38:18 | 显示全部楼层
Submitted on: 26 June 2018. Revised on: 18 August 2018. Accepted on: 11 September 2018. ___________________IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
发表于 2025-3-22 11:08:26 | 显示全部楼层
Submitted on: 30 September 2016. Revised on: 23 October 2016. Accepted on: 03 November 2016. ___________________IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
发表于 2025-3-22 14:51:17 | 显示全部楼层
发表于 2025-3-22 17:09:25 | 显示全部楼层
发表于 2025-3-22 22:27:10 | 显示全部楼层
发表于 2025-3-23 05:11:46 | 显示全部楼层
发表于 2025-3-23 09:08:47 | 显示全部楼层
Submitted on: 11 November 2021. Revised on: 20 February 2022. Accepted on: 22 March 2022. ___________________IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-4-27 01:25
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表