Titlebook: Wafer Bonding; Applications and Tec Marin Alexe,Ulrich Gösele Book 2004 Springer-Verlag Berlin Heidelberg 2004 Compound semiconductors.Diod

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Layer Transfer by Bonding and Laser Lift-Off,ominant manufacturing scheme throughout the history of the integrated circuit. This manufacturing paradigm has been adapted to the fabrication of Micro-Electro-Mechanical Systems (MEMS), active-matrix displays, read/write heads for disk drives and optoelectronic devices. Although this single-substra

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Application of Bonded Wafers to the Fabrication of Electronic Devices,trates prepared by fusion bonding of silicon-related materials. Since several comprehensive reviews have recently been published on the use of thin (thickness < 1 µm) SOI material for low-power, low-voltage, high-speed VLSI CMOS, such as for DRAMs [22, 64, 140], the chapter will concentrate on relat

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Wafer Bonding of Ferroelectric Materials,ls ferroelectrics are an important class of materials, exhibiting a large spectrum of properties and effects including the piezoelectric effect, pyroelectric effect, electro-optic effect, spontaneous polarization, etc. Ferroelectrics are attractive for many applications, the most important being fer

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Three-Dimensional Photonic Bandgap Crystals by Wafer Bonding Approach,als, and the propagation of electromagnetic waves is prohibited for all wave vectors. Various important scientific and engineering applications such as control of spontaneous emission, zero-threshold lasing, very sharp bending of light, trapping of photons, and so on, are expected to be realized by

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,High-Density Hybrid Integration of III–V Compound Optoelectronics with Silicon Integrated Circuits,s emerging as a technology able to provide the features and performance required by the next generation of high functionality information processing subsystems [1–3]. Though the performance potential of III–V OE is widely recognized, high-density co-integration with CMOS and low-cost manufacturabili