minuscule
发表于 2025-3-21 16:29:42
书目名称Ultra-Fast Silicon Bipolar Technology影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0940404<br><br> <br><br>书目名称Ultra-Fast Silicon Bipolar Technology读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0940404<br><br> <br><br>
Mingle
发表于 2025-3-21 21:40:27
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BRIBE
发表于 2025-3-22 01:04:36
978-3-642-74362-7Springer-Verlag Berlin Heidelberg 1988
类型
发表于 2025-3-22 08:05:53
Ultra-Fast Silicon Bipolar Technology978-3-642-74360-3Series ISSN 0172-5734
反话
发表于 2025-3-22 09:23:01
History, Present Trends, and Scaling of Silicon Bipolar Technology, Physics for their epochal invention. Since then, bipolar transistors have been widely used for many purposes. Applications can be divided into two broad categories: amplification and switching. As an amplifier more than a factor of 100 in amplification is available and a switching speed in the sub-ns range can be obtained.
定点
发表于 2025-3-22 15:04:08
Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors,e of polycrystalline silicon (poly-Si) as diffusion source and contact material for the emitter. Besides facilitating the second important achievement, self-alignment between emitter and base contact, the poly-Si emitter has the following major advantages:
制度
发表于 2025-3-22 19:43:16
Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar transistors, high-speed circuits are constructed and their excellent performance is nearly equal to that of GaAs devices. Other high-speed transistor structures are demonstrated, and sub- 50ps ECL circuits are predicted.
预防注射
发表于 2025-3-23 00:23:06
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Asperity
发表于 2025-3-23 04:37:07
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单挑
发表于 2025-3-23 07:26:52
Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors,a self-aligned bipolar transistor. The new technology, BSA (BSG Self-Aligned) technology, features the use of BSG film as a sidewall spacer between the emitter and base electrodes as well as the diffusion source for the intrinsic base and also for the p.-link region between the intrinsic and extrins