declamation
发表于 2025-3-28 17:44:22
MOS Capacitors, MOS Transistors, and Charge-Transfer Devicestrate. The description of the MOS capacitor is extended to that of the photocapacitor, to be later applied to the case of solid-state imagers. The transistor structure considered in this chapter is simple (i.e., planar); the analysis, however, is carried out in detail, leading to models for the drai
CAMEO
发表于 2025-3-28 19:33:20
http://reply.papertrans.cn/88/8751/875016/875016_42.png
跟随
发表于 2025-3-28 23:14:41
Planar MOSFETs and Their Application to IC Designsign using the most advanced planar MOSFET technological nodes. After a brief review of the progress in MOSFET architectures, the state-of-the-art UTBB FDSOI technology advantages are compiled, and some important designer needs are reminded. The main physical ingredients involved in the MOSFET stron
Spongy-Bone
发表于 2025-3-29 07:03:19
http://reply.papertrans.cn/88/8751/875016/875016_44.png
bromide
发表于 2025-3-29 07:15:56
http://reply.papertrans.cn/88/8751/875016/875016_45.png
TAIN
发表于 2025-3-29 14:10:55
http://reply.papertrans.cn/88/8751/875016/875016_46.png
mighty
发表于 2025-3-29 16:46:36
http://reply.papertrans.cn/88/8751/875016/875016_47.png
CRASS
发表于 2025-3-29 21:01:45
http://reply.papertrans.cn/88/8751/875016/875016_48.png
LAIR
发表于 2025-3-30 01:45:18
http://reply.papertrans.cn/88/8751/875016/875016_49.png
BROTH
发表于 2025-3-30 05:02:14
Interconnect Processing: Integration, Dielectrics, Metals”) materials as well as recent trends concerning air gap and porous dielectrics. The thin-film metals cover developments in physical vapor deposition (PVD) tooling and processes as well as chemical vapor deposition (CVD) wetting and cap layers. In the final section, modern trends in dielectric and selective metal caps are covered.