Indigent
发表于 2025-3-21 20:04:09
书目名称Simulation of Semiconductor Processes and Devices 2007影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0867648<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 2007读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0867648<br><br> <br><br>
ensemble
发表于 2025-3-21 21:31:15
Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment, etching / deposition cycles’ time ratios, the DRIE process shows three different regimes. These regimes are as well represented by the developed model. The simulation results obtained are compared with the corresponding REM images of trench etching experiments.
著名
发表于 2025-3-22 02:55:08
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Debility
发表于 2025-3-22 06:09:55
Molecular Dynamics Modeling of Octadecaborane Implantation into Si,les and the amount and morphology of the damage produced within the target. Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several advantages with respect to monatomic B beams, mainly related to the reduction of channeling and the lower amount of residual damage at the end of range.
semble
发表于 2025-3-22 12:39:42
High Performance, Strained-Ge, Heterostructure p-MOSFETs,chrödinger Simulations. The tradeoffs between drive current (ION), intrinsic delay (τ), band-to-band-tunneling (BTBT) leakage and short channel effects (SCE) have been systematically compared in high mobility strained-Ge Heterostructure FETs (H-FETs).
污点
发表于 2025-3-22 16:38:25
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GRIEF
发表于 2025-3-22 18:32:34
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神化怪物
发表于 2025-3-22 22:46:07
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Substance
发表于 2025-3-23 04:16:28
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Diluge
发表于 2025-3-23 07:35:45
Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation,vel” — the best established definition of nanotechnology [.] — is essential to maintaining Moore’s Law. However nanoelectronics, like many other applications for nanotechnology, requires more than making single devices in small areas. To be commercially relevant, structures must be manufactured in v