勤劳
发表于 2025-3-28 17:56:52
http://reply.papertrans.cn/87/8677/867647/867647_41.png
暂时别动
发表于 2025-3-28 19:20:51
https://doi.org/10.1007/978-3-7091-0624-2Doping; Layout; Signal; Simulation; algorithm; device operation; device technology; fabrication processes; m
同义联想法
发表于 2025-3-29 00:04:43
Continuum Modeling of Indium to Predict SSR Profiles,Indium (In) diffusion and dose-loss in silicon is modeled in a continuum simulator. The model includes the large segregation of In to End of Range (EOR) defects, and the dissolution of these defects resulting in dose-loss of In at the surface. The models developed are successfully applied to predict state of the art (90 nm) transistor performance.
束以马具
发表于 2025-3-29 06:10:53
A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices,el and 2-D Schrödinger equation in the confined cross section and provides insights into the performance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal . characteristics with great potential in scalability even when the gate length is below 5 nm with 2-by-2 nm channel cross section.
Muscularis
发表于 2025-3-29 11:05:45
Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channeity model to take buried channel hole mobility enhancement into account. 2D simulations were performed to study the channel design space for strained Ge buried channel PMOSFETs and two different buried channel structures were proposed to control short channel effect (SCE) down to 30nm channel length.
DAMP
发表于 2025-3-29 13:24:01
Simulation Study of Simple CMOS-Compatible Thin-SOI Vertical Bipolar Transistors on Thin BOX with aive SOI BiCMOS. These transistors have a virtual collector, which is an inversion layer created by the substrate bias. Device performance is suitable for mixed-signal applications, and scales well with design rules and SOI thickness.
collateral
发表于 2025-3-29 18:22:17
s (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the p
新义
发表于 2025-3-29 21:26:42
http://reply.papertrans.cn/87/8677/867647/867647_48.png
小画像
发表于 2025-3-30 03:36:15
http://reply.papertrans.cn/87/8677/867647/867647_49.png
修正案
发表于 2025-3-30 04:18:54
,Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green’s Function Formalism, of isotropic effective mass. More importantly, it is also found that the carriers flow not only in the lowest subband but also the second lowest one around the drain region, which cannot be expressed in conventional quantum correction methods.