Serenity 发表于 2025-4-1 05:53:28

,Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green’s Function Formalism, it is found that the . characteristics is quite different when a realistic band structure with 6 valleys is taken into account compared with the case of isotropic effective mass. More importantly, it is also found that the carriers flow not only in the lowest subband but also the second lowest one

etidronate 发表于 2025-4-1 08:00:45

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INCH 发表于 2025-4-1 11:01:44

, Calculations to Predict Stress Effects on Boron Solubility in Silicon, perform, we utilized . calculations to predict the effect of stress on B solubility. We find strongly enhanced solubility under compressive biaxial stress, whereas tensile biaxial stress leads to a reduction. In contrast to other work the enhancement/reduction is primarily due to the size effect of

失眠症 发表于 2025-4-1 15:28:35

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拾落穗 发表于 2025-4-1 18:44:36

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查看完整版本: Titlebook: Simulation of Semiconductor Processes and Devices 2004; Gerhard Wachutka,Gabriele Schrag Conference proceedings 2004 Springer-Verlag Wien