Levelheaded
发表于 2025-3-21 17:35:02
书目名称Simulation of Semiconductor Processes and Devices 1998影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0867645<br><br> <br><br>书目名称Simulation of Semiconductor Processes and Devices 1998读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0867645<br><br> <br><br>
平庸的人或物
发表于 2025-3-21 20:52:27
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CHIP
发表于 2025-3-22 01:30:49
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FIR
发表于 2025-3-22 08:02:02
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pacifist
发表于 2025-3-22 09:18:41
TCAD at the SRC,ng companies, their suppliers, and a number of affliated companies. Most of the research is conducted at US universities. Research partnerships exist with various organizations such as SEMATECH, the National Laboratories, NIST, DARPA, the State of New York. The SRC is presently organized into 7 scie
鄙视
发表于 2025-3-22 14:23:05
TCAD in Selete,up to now has changed. The author analyzes the causes of the changes in the competition fields and a solution is proposed from the view point of the TCAD technology. The purpose and activity of TCAD in Selete is also described. Selete is a stock company established by the LSI manufacturers(*).
Panther
发表于 2025-3-22 20:19:17
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显示
发表于 2025-3-22 23:06:31
Development of a gas-phase chemistry model for numerical prediction of MOVPE of GaN in industrial sses of formation and decomposition of the stable adduct compounds as a salient feature of CVD of group III-nitrides. The model relies upon estimation of the thermochemical properties of the feasible adducts, and detection of the predominant gas-phase species and reaction paths. No fitted parameters
阻碍
发表于 2025-3-23 05:06:10
Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings,tion of computational predictions is done by temperature measurements. Flow regimes are compared with respect to the flow structure and temperature distribution in the reactor. The modeling study results in better understanding of the processes that determine growth rate uniformity and reproducibili
GRAVE
发表于 2025-3-23 07:01:09
,Design Optimization of RF Power MOSFET’s Using Large Signal Analysis Device Simulation of Matching n of an LDMOS MOSFET, a model for the intrinsic device and the extrinsic parasitic components is developed. The RF performance of the model is then verified with experimental data. With the proven model, the effect of parasitic components is analyzed and the matching networks are optimized for the d