Comprise
发表于 2025-3-23 13:17:09
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幻想
发表于 2025-3-23 14:31:34
Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors,e germanium and base doping profiles of modern rf-bipolar transistors from the process recipe, i.e. gas flows, deposition time and temperature. A first approach is based on the interpolation of experimental data characterizing the CVD-equipment. Although this gives already very good results for slow
几何学家
发表于 2025-3-23 19:32:20
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不能平静
发表于 2025-3-24 01:36:01
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adipose-tissue
发表于 2025-3-24 04:16:22
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无法治愈
发表于 2025-3-24 08:52:54
A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculatiith an electrically inactive immobile peak. The immobile peak is due to clustering of boron in the presence of excess interstitials which also enhance boron diffusion in the tail region. In this paper we present a simple model for the formation of immobile boron clusters and associated point defect
枯燥
发表于 2025-3-24 12:59:14
Electromagnetic Simulation for the Modeling of Interconnects,tem and economical point of view but antagonist from a physical or electromagnetic one:.For modern VLSI circuits the well known Moore’s law is used to generate road maps describing the expectations for the next generations of integrated circuits in which downsizing is accompanied by increasing circu
完成
发表于 2025-3-24 16:44:38
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adequate-intake
发表于 2025-3-24 20:05:58
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MARS
发表于 2025-3-25 00:32:10
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