malcontented
发表于 2025-3-21 16:50:27
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MAIZE
发表于 2025-3-21 20:13:31
https://doi.org/10.1007/978-3-658-41041-4Processing of Silicon; CMOS Circuit Integration; Silicon on Insulator; Dry Etching; Ion Implantation; Che
maintenance
发表于 2025-3-22 01:04:17
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苦笑
发表于 2025-3-22 08:18:58
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Sedative
发表于 2025-3-22 08:48:54
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Synchronism
发表于 2025-3-22 16:52:55
Silicon Wafer Production,s. Starting from quarzite as the raw silicon material, purification and crystallization enable the growth of perfect monocrystalline ingots. They are cut into discs, getting perfect surfaces by subsequent grinding, etching and polishing.
nauseate
发表于 2025-3-22 20:22:30
Oxidation of Silicon,y oxide layers grow in dry or wet oxygen atmosphere at high temperature using silicon from the substrate, leading to segregation effects and interface charges. Alternatively, silicon dioxide deposition apply physical or chemical deposition techniques.
Aqueous-Humor
发表于 2025-3-22 22:03:12
Deposition Process, low concentration of impurities. These layers should be deposited stress-free at the lowest possible temperature on all other materials used in semiconductor technology. The techniques developed for these purposes can be divided into chemical and physical deposition.
使闭塞
发表于 2025-3-23 04:24:32
Metallization and Contacts,a chip by conductor tracks. As the work function of p- and n-type silicon differ, an appropriate metal is needed for ohmic contacts to the doped electrodes. Aluminium exhibits limited stability at high current density, thus copper wires are used in modern microprocessors.
抚慰
发表于 2025-3-23 08:47:25
MOS Technologies for Circuit Integration,cuits. Simple PMOS and NMOS metal gate processes for field effect transistor integration are explained first. The transistion to self-aligned polysilicon gate processes for minimum feature sizes down to 1.5 µm enables higher switching frequencies, whereas the CMOS technique reduces the power consumption of integrated circuits.