Palter
发表于 2025-3-28 15:54:42
Ulrich Hilleringmanny acknowledged that the number of completions is disturbingly low and MOOC drop-out rates have been a prominent issue of discussion. Currently, most MOOC analysis focuses on aspects such as patterns of engagement and prediction of dropout using data obtained by applying learning analytics to the lar
北极人
发表于 2025-3-28 20:55:35
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急急忙忙
发表于 2025-3-29 00:15:34
y acknowledged that the number of completions is disturbingly low and MOOC drop-out rates have been a prominent issue of discussion. Currently, most MOOC analysis focuses on aspects such as patterns of engagement and prediction of dropout using data obtained by applying learning analytics to the lar
VEST
发表于 2025-3-29 03:12:52
Textbook 20231st editionng for nanoscale structures and compares improvements like silicide contacts, copper metallization, high-k dielectrics, and SOI and FINFET structures. All processes are presented looking from the process engineer’s view..
fender
发表于 2025-3-29 10:59:13
udes modern processes like atomic layer deposition and etching for nanoscale structures and compares improvements like silicide contacts, copper metallization, high-k dielectrics, and SOI and FINFET structures. All processes are presented looking from the process engineer’s view..978-3-658-41040-7978-3-658-41041-4
insightful
发表于 2025-3-29 12:16:27
hnologies in microelectronics.Current methods of microelectr.The book presents the basic steps and the technical implementation of individual processes for microelectronic circuit integration in silicon. Interaction and influences of e. g. oxidation, etching, doping and thermal processes for integra
肉体
发表于 2025-3-29 16:20:22
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残废的火焰
发表于 2025-3-29 21:27:05
Etching Technology, the structure of the lithographically generated resist pattern to the underlying layer. Wet etching solutions and dry etching by reactive ion etching enable isotropic or directional etching profiles with high selectivities.
HAVOC
发表于 2025-3-30 02:39:53
Doping Techniques,bstrate dopingthus changing the electrical properties of the silicon. Diffusion at high temperature and ion implantation enable reproducible surface doping of the silicon wafer with acceptors or donors.
constitute
发表于 2025-3-30 06:49:34
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