invoke
发表于 2025-3-21 16:26:43
书目名称Silicon Carbide Ceramics—1影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0867303<br><br> <br><br>书目名称Silicon Carbide Ceramics—1读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0867303<br><br> <br><br>
独轮车
发表于 2025-3-21 23:46:06
Grain Boundary and High-Temperature Strength in SiC,special phase but simply of a relaxed structure with some extension, and is most likely composed mainly of SiC itself It is shown that the concept of extended grain boundaries can explain the observed behaviour in SiC.
刀锋
发表于 2025-3-22 03:01:08
Sintering of Silicon Carbide,hat optimization of added B content, sintering atmosphere and heating rate are important factors controlling the density of the sintered SiC. Sinterability of Al-doped SiC powder and sintering by the addition of Al.O., Al-C, Al-B-C and other compounds are summarized.
persistence
发表于 2025-3-22 05:14:28
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DECRY
发表于 2025-3-22 11:17:28
Grain Boundaries in High-Purity Silicon Carbide, and a 6H/15R hetero-polytype boundary were observed. Both boundaries were without an amorphous layer. The periodic arrangement of atoms in the boundaries was analyzed using the geometrical coincidence-site lattice model, while the actual atomic structure of the boundary was modeled from the HRTEM images.
SLAG
发表于 2025-3-22 15:06:23
Crystal Chemistry of Silicon Carbide,he thermal stability of basic polytypes such as 2H, 3C, 4H, 15R and 6H, the effects of foreign atoms incorporated in the lattice on the stability of the basic polytypes, and the stability of long-period polytypes.
LARK
发表于 2025-3-22 20:13:32
Epitaxial Growth of SiC Single Crystal Films,ical stability, large bandgap, and good carrier mobility. Reflecting on these circumstances, the single crystal growth technique has recently made great progress..In the first half of this chapter, the various single crystal growth methods will be described with an emphasis on epitaxial film growth.
lobster
发表于 2025-3-22 23:37:15
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botany
发表于 2025-3-23 03:02:01
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plasma
发表于 2025-3-23 08:40:34
Sintering Behavior of Ultrafine Silicon Carbide Powder,asis on the effects of powder properties and sintering aids..The ultrafine SiC powder showed a remarkable densification in the presence of both carbon and boron as sintering aids, but the sintering aids were indispensable to densification. The homogeneous addition of sintering aids was important to