cognizant 发表于 2025-3-23 12:48:43
Grain Boundaries in High-Purity Silicon Carbide,ctron microscope (HRTEM). Two asymmetric tilt boundaries with a rotation of . about ., Le. a .H polytype boundary parallel to . of one of the crystals and a 6H/15R hetero-polytype boundary were observed. Both boundaries were without an amorphous layer. The periodic arrangement of atoms in the boundaoracle 发表于 2025-3-23 17:02:42
Grain Boundary and High-Temperature Strength in SiC,f strength loss at high temperatures. The absence of strength loss may be attributed to the occurrence of an ‘extended grain boundary’, whereas the remarkable loss in strength is due to the existence of an amorphous-like second phase at the grain boundaries. This extended grain boundary is not of a墙壁 发表于 2025-3-23 19:14:07
http://reply.papertrans.cn/87/8674/867303/867303_13.pngpersistence 发表于 2025-3-24 01:04:50
http://reply.papertrans.cn/87/8674/867303/867303_14.pngMawkish 发表于 2025-3-24 04:45:39
Multiple Toughening in Al2O3/SiC Whisker/ZrO2 Composites,vol.% SiC whisker /15 vol.% ZrO.. The whisker bridging /pullout mechanism rather than crack deflection was believed responsible for whisker toughening in the composites studied. Multiplicative and interactive effects between whiskers and transformation toughening are discussed.神化怪物 发表于 2025-3-24 10:16:52
Sintering Aids and Thermal Conductivity of Polycrystalline SiC,red compact. Effects of the addition of boron together with carbon; alumina, beryllium, barium oxide with carbon; and rare earth oxides with carbon on the sintering of SiC and the thermal conductivity of SiC ceramics are described.指耕作 发表于 2025-3-24 12:05:40
Epitaxial Growth of SiC Single Crystal Films,spin resonance methods..At present, epitaxially grown β-SiC films with a thickness of more than several micrometres can be constantly and uniformly prepared on Si substrates of . in. However, these films still contain a high concentration of . planar defects. This problem must be resolved if they are to be of practical use in the near future.支柱 发表于 2025-3-24 15:03:35
http://reply.papertrans.cn/87/8674/867303/867303_18.png内行 发表于 2025-3-24 19:25:14
Preparation and Sintering Properties of Ultrafine Silicon Carbide Powder Obtained by Vapor Phase Reby the addition of boron powder alone. SiC ceramics prepared from ultrafine powders have a much finer texture than those obtained from conventional powders..It is concluded that powders obtained by CVD could be applicable to functional and high-performance SiC ceramics which require well-controlled枫树 发表于 2025-3-25 01:54:50
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