半圆凿
发表于 2025-3-25 05:46:54
Textbook 2020Latest editionssing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semico
柳树；枯黄
发表于 2025-3-25 09:20:45
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拍下盗公款
发表于 2025-3-25 15:02:53
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古文字学
发表于 2025-3-25 18:29:45
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疯狂
发表于 2025-3-25 22:59:55
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无法解释
发表于 2025-3-26 00:38:33
Chip Reliability,presented. The sections include dielectric reliability, electro and stress migration, hot-carrier reliability, latch-up, bias-temperature instabilities, Joule heating and resistor reliability, high-voltage and high-power MOSFET reliability, plasma damage, and electrostatic discharge.
macabre
发表于 2025-3-26 05:20:41
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Constrain
发表于 2025-3-26 08:40:25
Analog/RF CMOS,sections that follow, with emphasis on key analog parameters. The chapter concludes with a review of mobility enhancement techniques, high-κ dielectrics, FinFETs, and fully depleted SOI MOSFETs and a brief discussion of analog CMOS applications.
预测
发表于 2025-3-26 15:16:25
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Pulmonary-Veins
发表于 2025-3-26 17:50:22
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