Nomadic
发表于 2025-3-23 11:44:40
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noxious
发表于 2025-3-23 16:27:09
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否认
发表于 2025-3-23 20:31:11
Bipolar and Junction Field-Effect Transistors,tly use the component in bipolar and BiCMOS applications. It is also important to understand bipolar effects in CMOS, such as the subthreshold behavior, snapback, and latch-up, and to identify process and design techniques to modify their impact on circuit performance. Similarly, a discussion of int
chalice
发表于 2025-3-24 01:31:41
Analog/RF CMOS, digital CMOS on operating voltage level, reduced low-frequency noise, high output resistance, low component mismatch, and high linearity. Thus, modifications must be made to the basic digital structure to satisfy analog circuit needs. In contrast, the characteristics of RF CMOS are essentially the
Lyme-disease
发表于 2025-3-24 02:34:13
High-Voltage and Power Transistors,oth cases, the drain is extended with a lightly doped region, referred to as the ., to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface field (RESURF) techniques. The transistor switching performance is then analyzed
overbearing
发表于 2025-3-24 08:58:43
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Excise
发表于 2025-3-24 11:23:09
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alabaster
发表于 2025-3-24 16:07:02
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Pastry
发表于 2025-3-24 20:17:59
Chip Reliability, to reliability engineering. An overview of important failure mechanisms of components and methods to reduce their impact on chip reliability is then presented. The sections include dielectric reliability, electro and stress migration, hot-carrier reliability, latch-up, bias-temperature instabilitie
surmount
发表于 2025-3-24 23:13:10
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