Subjugate
发表于 2025-3-28 17:46:15
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高尔夫
发表于 2025-3-28 22:17:57
An Accurate Noise Analysis in MESFET Including Hot Carrier Effectsgh frequency conditions, and as long as some specific properties of gallium arsenide, i.e. field dependent mobility and field dependent electron noise temperature, are included. Finally, this new noise model, which we introduce, can be used for theoretical computer aided design of low noise devices.