Monomania
发表于 2025-3-21 16:27:35
书目名称Resonant Tunneling in Semiconductors影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0828520<br><br> <br><br>书目名称Resonant Tunneling in Semiconductors读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0828520<br><br> <br><br>
万灵丹
发表于 2025-3-21 23:57:24
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针叶类的树
发表于 2025-3-22 02:47:54
978-1-4613-6716-1Plenum Press, New York 1991
LAITY
发表于 2025-3-22 05:27:27
Resonant Tunneling in Semiconductors978-1-4615-3846-2Series ISSN 0258-1221
阻止
发表于 2025-3-22 09:05:08
A Perspective of Resonant Tunnelingductor materials, proceeds to discuss the effects of band structure and electron dynamics, continues to describe systems of multiple barriers and low dimensional electrons, and ends with a summary of device applications. The emphasis is on major experimental observations, which serve as cornerstones of this field.
Ambulatory
发表于 2025-3-22 16:52:12
Resonant Tunneling of Holes in Strained Layers—SiGe/Siort direction has been investigated. With the perpendicular field direction, tunneling of light and heavy holes can he clearly discriminated, while the parallel magnetic field gives complicated results. A hot hole tunneling transistor has been successfully fabricated using a resonant tunneling emitter.
范例
发表于 2025-3-22 17:20:44
Resonant Tunneling of Holes in the Envelope-Function Approximationresented. The formalism is applied to lattice-matched GaAs-AlAs and lattice-mismatched Si-Si.Ge.. The effects of mixing between heavy-hole, light-hole and spin-orbit split-off states are seen in the transmission coefficient. The calculated resonant bias values in the current are compared with experimental results.
圆桶
发表于 2025-3-23 00:06:50
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Gudgeon
发表于 2025-3-23 01:36:08
Studies on Tunneling Characteristics on Asymmetric GaAs/AlAs Double-Barrier Structureser two opposite biases have systematically been studied. It is found that LO phonon-assisted tunneling in two opposite directions may possibly be controlled by the different dwell times of traversing electrons in the well as the structure is positively or negatively biased.
声明
发表于 2025-3-23 06:49:55
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