CODA
发表于 2025-3-30 11:17:36
D. G. Austing,P. C. Klipstein,A. W. Higgs,G. W. Smith,J. S. Roberts,G. Hill19 pandemic.Uses an accessible language for academics, stude.This book discusses the emerging threats to European stability in different borderland regions, from the Greater Middle East to the Eastern Mediterranean, the Balkans and the Black Sea. It highlights the specific geopolitical risks that co
弄皱
发表于 2025-3-30 13:40:22
C. Delalanden die sozialen Gebilde der Staaten in einen bestimmten Raum von bestimmter Mindestgröße hineinwachsen, wenn sie lebensfähig bleiben und die „Kinderkrankheiten“ der politischen Anfangsentwicklung überwinden wollen. Selbst bei den Städten unserer Tage wirkt sich ja in industrie- und verkehrsreichen Ge
生锈
发表于 2025-3-30 20:00:32
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商品
发表于 2025-3-30 23:13:59
0258-1221 ", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disc
declamation
发表于 2025-3-31 01:43:54
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Adrenaline
发表于 2025-3-31 06:02:20
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使残废
发表于 2025-3-31 09:19:30
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nocturnal
发表于 2025-3-31 15:41:18
Phonon Emission Processes in (GaIn)As/(AlIn)As Double Barrier Diodese conductivity of the sample reveal the presence of both elastic and inelastic intersubband scattering in the quantum well of the structure and “GaAs-like” LO phonon emission assisted intersubband scattering is identified.
Left-Atrium
发表于 2025-3-31 20:24:33
MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures peak-to-valley current ratios (up to 5.9) reported to date for GaAs-based structures. Through comparative experiments with different well materials we are able to explain the asymmetry which is commonly observed between forward and reverse bias in the I-V characteristics.
闷热
发表于 2025-4-1 00:03:35
Resonant Interband Tunnelingbserved. The calculated current-voltage characteristics show different behavior according to having GaSb or InAs as the quantum well. Also, in some cases, they are very asymmetric with respect to change of bias polarization, in agreement with experimental results.