方言
发表于 2025-3-21 16:39:53
书目名称Research on the Radiation Effects and Compact Model of SiGe HBT影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0828066<br><br> <br><br>书目名称Research on the Radiation Effects and Compact Model of SiGe HBT读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0828066<br><br> <br><br>
不在灌木丛中
发表于 2025-3-21 23:50:04
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邪恶的你
发表于 2025-3-22 02:18:18
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变形词
发表于 2025-3-22 05:13:33
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Charlatan
发表于 2025-3-22 12:05:29
Book 2018based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique..
集聚成团
发表于 2025-3-22 13:17:27
2190-5053 icon-germanium (SiGe) heterojunction bipolar transistors (HBThis book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects,
abduction
发表于 2025-3-22 17:05:07
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放逐某人
发表于 2025-3-22 21:33:26
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杀菌剂
发表于 2025-3-23 03:50:51
Single Event Transients in SiGe HBT,When the high-energy charged particles strike the transistors or circuits, an amount of high-density electron hole pairs are generated, and then single event effects are produced when the electron hole pairs are collected by device terminals.
遗忘
发表于 2025-3-23 07:00:13
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