多产鱼
发表于 2025-3-23 10:59:02
Parameter Extraction of SiGe HBTs,The extracted results using the numerical optimization strongly depends on the initial value and the the selection of simulation tool. Direct analytical extraction method is generally based on the frequency response
无意
发表于 2025-3-23 16:59:46
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观察
发表于 2025-3-23 19:13:08
Yabin SunNominated as an outstanding PhD dissertation by Tsinghua University, China.Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HB
RAGE
发表于 2025-3-23 22:38:00
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tariff
发表于 2025-3-24 02:24:04
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变化无常
发表于 2025-3-24 07:36:44
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Amnesty
发表于 2025-3-24 10:44:52
Displacement Effects in SiGe HBT,ch has become an important issue in the study of radiation effects. In the past few years, as the traditional radiation source, neutrons have been always used to characterize the displacement damage effects in devices and circuit systems.
Infraction
发表于 2025-3-24 18:20:10
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烧瓶
发表于 2025-3-24 20:10:19
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修饰语
发表于 2025-3-25 01:34:47
Benjamin Rix Brooks M.D.,Robert L. Hirsch Ph.D.,Patricia K. Coyle M.D.erseits wird die Selbstverständlichkeit von Werten und Normen — die Kultur -der Einheimischen plötzlich in Frage gestellt, ihre sozialen Produktionsfunktionen bedroht, Konkurrenz entsteht. Andererseits müssen die Zuwanderer neue Handlungsstrategien entwerfen, die es ihnen erlauben, sich in der Aufna