Freeze
发表于 2025-3-30 08:53:38
Book 1993 inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l‘Armement and CNET gav
商议
发表于 2025-3-30 15:09:30
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群居男女
发表于 2025-3-30 16:46:05
Electronic Charge Trapping Effects in Porous Silicon,porosity samples do not. This is interpreted in term of space charge effects on the p-Si surface that induce loss of surface passivation and, consequently, photoluminescence degradation. This finding can explain the measured electroluminescent properties of Schottky diodes formed by Au evaporation on p-Si.
嘲弄
发表于 2025-3-31 00:40:10
Optoelectronic Properties of Porous Silicon,s crystalline electronic structure. Our results provide direct evidences of the central assumption that visible luminescence of PS is based on surface-sensitive quantum confinement effects in Si nanocrystallites
Carminative
发表于 2025-3-31 04:14:50
Voltage-Tunable Electroluminescence of Porous Silicon,A reversible spectral shift as large as 270 nm is obtained for a bias variation of 0.6 V. The comparaison of the EL spectrum with the photoluminescence (PL) signal suggests that the inhomogeneous luminescence of porous silicon is selectively excited by an electrical way.
退潮
发表于 2025-3-31 06:55:40
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怪物
发表于 2025-3-31 12:20:12
Scanning probe microscopies of luminescent porous silicon layers,.Texture is composed of grain of size compatible with quantum confinement effects.These nanostructures are found to be responsible for visible light emission and they are mapped together with the topography in the Low Energy Scanning Cathodoluminescence Microscope.
correspondent
发表于 2025-3-31 16:57:20
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Indolent
发表于 2025-3-31 20:22:08
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者变
发表于 2025-4-1 00:22:47
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