残废的火焰 发表于 2025-3-23 11:52:42
Electronic Charge Trapping Effects in Porous Silicon,ger spectroscopy) and the photoluminescence (PL) of p-Si are measured before and after the electron irradiation. A different behavior is observed on samples with various porosity. High porosity samples show surface charge accumulation during irradiation and PL degradation after treatment, while low从属 发表于 2025-3-23 17:33:28
Mechanical, Optical and Electrical Properties of Porous Silicon Prepared under Clean Conditions,at the asanodised layers are in a compressive state, and that after annealing the stress changes and plastic deformation takes place. The film resistivities are greater than 10.Ω-cm. Photoluminescence stability from LEPOS is demonstrated on the scale of months. Finally, we present our measurements odefinition 发表于 2025-3-23 21:26:59
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http://reply.papertrans.cn/71/7027/702642/702642_14.pngAVID 发表于 2025-3-24 03:50:59
,“White” photoluminescence from electrochemically attacked silicon,pearing “white” to the naked eye. Spectroscopy of such samples reveals the presence of a distinct blue luminescence band. The spectral characteristics of the blue band are described and its nature discussed.剧本 发表于 2025-3-24 06:56:56
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Studies of Porous Silicon by Electron Microscopy,osity, potential applications have evolved first in the Si-on-insulator area and, most recently, based upon its important luminescence properties. However, progress in understanding the behaviour of porous Si has been dependent to a substantial degree upon determination of its structural characteris消极词汇 发表于 2025-3-25 01:17:55
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