Exacting
发表于 2025-3-21 17:33:58
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创新
发表于 2025-3-21 21:51:40
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刀锋
发表于 2025-3-22 01:23:06
The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSbtaking their predominant character from higher conduction band minima. These states can be made to emerge into the forbidden gap by applying hydrostatic pressure. Judged by the measured pressure coefficients two sets of levels are closely tied to the L- and X-conduction band minima. At low temperat
披肩
发表于 2025-3-22 07:43:58
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傲慢物
发表于 2025-3-22 12:02:22
Determination of the lateral defect distribution by SDLTS in GaAs,s approximation cannot be used without restrictions and investigation of the SDLTS signal as a function of generation parameters is necessary, as will be illustrated by measuring the EL2 distribution in GaAs Schottky barrier.
新陈代谢
发表于 2025-3-22 13:30:19
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facilitate
发表于 2025-3-22 19:42:57
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样式
发表于 2025-3-23 00:20:09
Spectroscopic studies of point defects in silicon and germanium,ts from group III and V in the Periodic Table, special attention is given to defects with binding energies of the ground state much larger than those predicted by the effective mass theory (EMT) such as double donors (group VI) and double acceptors (group II) as well as transition metals. All these
malign
发表于 2025-3-23 03:54:26
Interpretation of the electric field dependent thermal emission data of deep traps, the interpretation of the thermal emission probability measurements. It is concluded that the contribution of the capture process if properly taken into account proves the validity of the Poole-Frenkel model of the electric field dependence.
Narrative
发表于 2025-3-23 06:30:52
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