Obstreperous
发表于 2025-3-23 11:54:05
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Lucubrate
发表于 2025-3-23 15:44:43
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avarice
发表于 2025-3-23 18:39:23
Lawrence C. Snyder,James W. Corbett,Peter Deák,Rongzhi Wu
可以任性
发表于 2025-3-23 22:24:29
H. G. Grimmeiss,M. Kleverman,K. Bergman,L. Montelius
残忍
发表于 2025-3-24 05:30:37
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synovial-joint
发表于 2025-3-24 08:57:16
Band-edge offsets in semiconductor heterojunctions,ion-metal-energy level alignment and experimental results of BEO‘s in binary and ternary III–V compounds a level order of valence-band edges in these compounds is proposed. The importance of a fixed reference level formed by transitions metals in the semiconductor is emphasized and recently reported
GREEN
发表于 2025-3-24 11:01:56
Theory of the energy loss rate of hot electrons in 2D systems,
因无茶而冷淡
发表于 2025-3-24 15:35:15
Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown silicon,
forestry
发表于 2025-3-24 21:42:50
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Juvenile
发表于 2025-3-25 03:01:26
The diffusion and electronic structure of hydrogen in silicon,