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Silicon Nanocrystal Nonvolatile Memory,caling of floating-gate (FG) nonvolatile memory cells has been limited to bottom oxide thicknesses in the range of 80–110 Å primarily because of the vulnerability to charge loss from the conducting FG through isolated defects in the tunnel oxide that arise after repeated write/erase operations. As ahemoglobin 发表于 2025-3-27 21:33:38
http://reply.papertrans.cn/67/6611/661098/661098_36.pngcringe 发表于 2025-3-28 01:47:56
Scanning Force Microscopies for Imaging and Characterization of Nanostructured Materials,ll as exciting prospects of new emerging technologies (quantum electronics, biochips, etc.) are prompting a huge interest in nanotechnology and the science of nanostructured materials. In particular, there is a need to develop efficient technologies for the preparation of surfaces with desired strucRODE 发表于 2025-3-28 02:55:13
http://reply.papertrans.cn/67/6611/661098/661098_38.png表示向下 发表于 2025-3-28 06:37:33
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