Irritate
发表于 2025-3-23 12:35:07
Silicon Nanocrystal Nonvolatile Memory,us nature of charge storage. In other words, an underlying oxide defect leads to charge loss only from charge storage sites in its immediate proximity. Once the impact of defect-mediated charge loss is mitigated, charge loss is primarily due to tunneling and the tunnel oxide in these devices can be
真
发表于 2025-3-23 14:28:57
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乐意
发表于 2025-3-23 20:11:59
Simulation of Nano-CMOS Devices: From Atoms to Architecture,that the scaling of the CMOS transistors will continue in the next two decades, it is widely recognized that intrinsic parameter fluctuations introduced by the discreteness of charge and matter will be a major factor limiting the integration of such devices with molecular dimensions in giga-transist
极端的正确性
发表于 2025-3-24 01:03:40
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SEVER
发表于 2025-3-24 06:22:42
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conjunctiva
发表于 2025-3-24 09:49:51
Nanostructure Science and Technologyhttp://image.papertrans.cn/n/image/661098.jpg
裹住
发表于 2025-3-24 14:28:23
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Lethargic
发表于 2025-3-24 18:25:52
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不透明性
发表于 2025-3-24 21:34:09
Nanotechnology for Electronic Materials and Devices978-0-387-49965-9Series ISSN 1571-5744 Series E-ISSN 2197-7976
协定
发表于 2025-3-24 23:44:45
A Hybrid Route from CMOS to Nano and Molecular Electronics,transistors; if the current trend toward higher and higher integration continues, an Avogadro number of transistors will be manufactured in the next 20 years–in a way, microelectronics is already “molecular” electronics, if not for the transistor size for the number of transistors at least. Hence, the following question: .