Holter-monitor
发表于 2025-3-21 20:05:44
书目名称Methods and Materials in Microelectronic Technology影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0632215<br><br> <br><br>书目名称Methods and Materials in Microelectronic Technology读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0632215<br><br> <br><br>
faction
发表于 2025-3-21 21:20:45
High Performance Cooling and Large Scale Integration, a proportionate increase in power per chip. The trade-off between power and speed means that the limited ability of technology to remove heat at high density from compact structures leads to a lower power dissipation per gate at higher levels of integrations and lower speed.
gerrymander
发表于 2025-3-22 01:13:22
http://reply.papertrans.cn/64/6323/632215/632215_3.png
小画像
发表于 2025-3-22 05:23:20
Reactive Ion Etching and Related Polymerization Processes, progress that has been made in understanding the role which ion-surface interactions play in increasing the rates of surface etching processes and how this relates to control over etch feature geometry.
带伤害
发表于 2025-3-22 12:41:31
http://reply.papertrans.cn/64/6323/632215/632215_5.png
承认
发表于 2025-3-22 16:11:57
http://reply.papertrans.cn/64/6323/632215/632215_6.png
季雨
发表于 2025-3-22 17:40:49
http://reply.papertrans.cn/64/6323/632215/632215_7.png
invade
发表于 2025-3-23 00:27:53
http://reply.papertrans.cn/64/6323/632215/632215_8.png
反对
发表于 2025-3-23 02:38:03
http://reply.papertrans.cn/64/6323/632215/632215_9.png
RAFF
发表于 2025-3-23 09:26:52
Silicide Contact and Gate in Microelectronic Devices,A brief review about silicide metallization technology, i.e. the use of transition metal silicides as contacts and gates in large scale integrated silicon devices is presented and a short discussion about the low temperature redistribution of dopant induced by a moving silicidesilicon interface is included.