武士精神
发表于 2025-3-21 18:47:56
书目名称Metallization and Metal-Semiconductor Interfaces影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0631550<br><br> <br><br>书目名称Metallization and Metal-Semiconductor Interfaces读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0631550<br><br> <br><br>
conscience
发表于 2025-3-21 23:03:58
0258-1221 the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment
Irritate
发表于 2025-3-22 01:48:35
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Servile
发表于 2025-3-22 07:09:14
Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodesn,. interface dislocations,. or a combination of these effects. Deviations from the Schottky model2 are then understandable on the basis of trapped interface charge which maintains a dipole at the interface between the metal and the semiconductor..
沟通
发表于 2025-3-22 12:18:38
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Musculoskeletal
发表于 2025-3-22 14:51:24
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CESS
发表于 2025-3-22 18:10:40
Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfacesy of the electronic properties of these interfaces at a level not possible for other metal-semiconductor systems. These Schottky-barrier systems are on a par with, or perhaps better than, molecular-beam-epitaxy-grown semiconductor heterostructures in their degree of perfection.
废墟
发表于 2025-3-22 23:14:11
e cell. In the last few years, direct RNA nanopore sequencing (dRNA-seq) has emerged as a promising technology that can provide single-molecule resolution maps of RNA modifications in their native RNA context. While native RNA can be successfully sequenced using this technology, the detection of RNA
利用
发表于 2025-3-23 03:42:35
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jagged
发表于 2025-3-23 07:19:07
e cell. In the last few years, direct RNA nanopore sequencing (dRNA-seq) has emerged as a promising technology that can provide single-molecule resolution maps of RNA modifications in their native RNA context. While native RNA can be successfully sequenced using this technology, the detection of RNA