挫败
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突袭
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本能
发表于 2025-3-29 02:39:39
978-1-4612-8086-6Plenum Press, New York 1989
赌博
发表于 2025-3-29 03:04:37
Metallization and Metal-Semiconductor Interfaces978-1-4613-0795-2Series ISSN 0258-1221
臭了生气
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文件夹
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叙述
发表于 2025-3-29 18:00:31
Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfacess is because the emphasis has been on discovering a single mechanism which could explain everything. Monch has already suggested the importance of multiple mechanisms, and this approach will be emphasized in this paper.
Anticoagulant
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现代
发表于 2025-3-30 00:03:11
The Role of Defects and Metal States at the Metal-Semiconductor Interfaceempty, cation-derived dangling bond states. The consequence of this interaction is the formation of broadened resonances which tail into the semiconductor bandgap. The rehybridization of the dangling bonds with the metallic states at the interface was not considered. In general the MIGS models encou
温和女人
发表于 2025-3-30 05:49:25
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