CILIA
发表于 2025-3-21 19:30:51
书目名称Long-Term Reliability of Nanometer VLSI Systems影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0588579<br><br> <br><br>书目名称Long-Term Reliability of Nanometer VLSI Systems读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0588579<br><br> <br><br>
联想记忆
发表于 2025-3-21 23:43:36
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Inflammation
发表于 2025-3-22 03:35:19
https://doi.org/10.1007/978-3-030-26172-6Reliability in nanometer integrated systems; Bias Temperature Instability for Devices and Circuits; El
ear-canal
发表于 2025-3-22 05:34:37
Aging-Aware Standard Cell Library Optimization MethodsWhile the focus of the previous chapters was the modeling of reliability, the focus of the following chapters is to design reliable cells and circuits in order to mitigate the aging effect.
朋党派系
发表于 2025-3-22 11:11:22
Aging Guardband Reduction Through Selective Flip-Flop OptimizationModern VLSI circuits are influenced by several sources of process and runtime variabilities, including transistor aging. Therefore, it is necessary to employ techniques to consider and control the gradual degradations and mismatches during design time, e.g., by adding appropriate timing margins (.) and incorporating mitigation techniques.
后退
发表于 2025-3-22 13:13:10
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领袖气质
发表于 2025-3-22 18:46:21
978-3-030-26174-0Springer Nature Switzerland AG 2019
假
发表于 2025-3-22 22:06:22
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Accommodation
发表于 2025-3-23 03:55:39
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noxious
发表于 2025-3-23 08:18:19
Book 2019 transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;.Presents a cross-layer approach to transistor aging modeling,