Atheroma
发表于 2025-3-25 03:34:15
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Acquired
发表于 2025-3-25 09:10:19
LSI: Prospects and Problemsional capability. Integration and miniaturization are the routes by which this is accomplished. Progress in integration and miniaturization involves solving a continual series of technological problems in lithography and chemical process technology.
爱管闲事
发表于 2025-3-25 15:04:25
Silicon Crystals for Large Scale Integrated Circuitsd for electronic-grade poly-crystalline silicon., which in 1980 has already exceeded 2000 tons/year (Fig. 1). The major driving force of the electronic industry is integrated circuits, which require high quality large diameter (75–125 mm) single crystalline wafers and ingots.
生气的边缘
发表于 2025-3-25 18:05:36
Structural Techniques for Bulk Defects Characterizationaphy, transmission and scanning electron microscopy. Examples of defects analysis are reported concerning the characterization of the defects introduced by the phosphorous predeposition in Si and the study of dark current sources in charge-coupled devices. A final section is dedicated to a more deta
farewell
发表于 2025-3-25 22:13:30
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Judicious
发表于 2025-3-26 00:39:36
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护身符
发表于 2025-3-26 06:38:15
Silicon Epitaxyss for device technology are discussed in other sections of this lecture series. Here we will concentrate on epitaxy by chemical vapor deposition (CVD), which is to be contrasted with physical vapor deposition where atoms to be deposited are emitted by a heated source and are incident on the substra
蔑视
发表于 2025-3-26 11:17:27
Computer Simulation of Complete IC Fabrication Processon which make it possible to numerically simulate multiple diffused species -- arsenic-boron and phosphorus-boron -- as well as redistribution effects associated with moving boundaries in oxidation and epitaxy will be discussed.
损坏
发表于 2025-3-26 12:54:28
Beam Processing Techniques Applied to Crystal Silicon Substratestemperature fabrication steps are rate determined by a solid-state diffusion process (e.g. oxidation, dopant diffusion and redistribution, radiation damage annealing, gettering,...) whose diffusion constant is exponentially dependent on temperature with activation energies of the order of a few eV.
BRIDE
发表于 2025-3-26 19:26:33
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