合适
发表于 2025-3-28 16:46:30
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Preamble
发表于 2025-3-28 19:36:22
Distribution of Boron Implanted Silicones for 80–300 keV range. Distributions at various angles away from the <111> or <100> channels are presented and comparisons are made between distributions implanted with planar channeling and those which have no major index planar channeling. A discussion of these results and related annealing behavior for boron implanted silicon is given.
阉割
发表于 2025-3-29 00:02:22
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前奏曲
发表于 2025-3-29 05:47:24
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Feedback
发表于 2025-3-29 08:28:04
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Canopy
发表于 2025-3-29 13:13:29
Investigation of Ion Implantation Damage with Stress Measurementstroduce damage sublinearly with . at medium . values. The maximum in all the stress versus . results is taken as evidence for an elastic-plastic transition in the implanted layer. This elastic-plastic transition is correlated with what others have called the crystalline-to-amorphous transition.
繁荣地区
发表于 2025-3-29 16:19:47
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气候
发表于 2025-3-29 20:26:08
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线
发表于 2025-3-30 00:37:35
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Interim
发表于 2025-3-30 05:23:44
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