plasma-cells
发表于 2025-3-25 08:18:08
A New Method for Boron Doping of Silicon by Implantation of BF2-Moleculeserature BF. implantation the annealing data indicate that an amorphous layer was formed; the sheet resistivity after 650°C anneal is a factor of 10 lower than for an equivalent energy boron implant and the samples are nearly completely annealed. For doses of ⩽10. cm. there is no marked difference in
EXUDE
发表于 2025-3-25 12:24:57
http://reply.papertrans.cn/48/4752/475174/475174_23.png
instulate
发表于 2025-3-25 17:36:53
http://reply.papertrans.cn/48/4752/475174/475174_24.png
chemical-peel
发表于 2025-3-25 23:50:54
http://reply.papertrans.cn/48/4752/475174/475174_25.png
宽容
发表于 2025-3-26 02:56:09
http://reply.papertrans.cn/48/4752/475174/475174_26.png
帽子
发表于 2025-3-26 07:37:25
http://reply.papertrans.cn/48/4752/475174/475174_27.png
沙漠
发表于 2025-3-26 10:12:12
978-3-642-80662-9Springer-Verlag, Berlin · Heidelberg 1971
发展
发表于 2025-3-26 13:01:25
http://reply.papertrans.cn/48/4752/475174/475174_29.png
藐视
发表于 2025-3-26 18:34:43
http://reply.papertrans.cn/48/4752/475174/475174_30.png
HUSH
发表于 2025-3-27 00:43:06
Crystal Defects and Electrical Properties in Ion-Implanted SiliconInvestigations have been made on crystal damages in silicon produced by 100 and 150 keV B., P., and Ne. ion implantations. Their effects on electrical properties of the implanted layers have also been studied as a function of implantation and subsequent annealing conditions