opioid
发表于 2025-3-21 19:37:17
书目名称Hot Carrier Degradation in Semiconductor Devices影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0428429<br><br> <br><br>书目名称Hot Carrier Degradation in Semiconductor Devices读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0428429<br><br> <br><br>
recede
发表于 2025-3-21 22:54:03
From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradationus possible isotope effects provide context for a discussion of some qualitative aspects of the physics. Typical industry DC hot carrier stress models and their application to AC circuit models are described and motivated in that context.
圣人
发表于 2025-3-22 03:00:53
http://reply.papertrans.cn/43/4285/428429/428429_3.png
会议
发表于 2025-3-22 06:46:10
http://image.papertrans.cn/h/image/428429.jpg
BIDE
发表于 2025-3-22 09:33:42
https://doi.org/10.1007/978-3-319-08994-2Degradation of Semiconductor Device Performance; Hot Carrier Degradation; Reliability Physics and Engi
GREEN
发表于 2025-3-22 16:28:01
http://reply.papertrans.cn/43/4285/428429/428429_6.png
构成
发表于 2025-3-22 20:11:00
Jacopo Franco,Ben Kaczercal examples and guidelines, it will be of great interest to students and academics of supply chain management and procurement, as well as service supply chain managers looking for advanced strategies..978-3-031-68246-9978-3-031-68244-5
noxious
发表于 2025-3-23 00:01:29
Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degrs now cold-carrier (CC) damage results in a multiple-particle (MP) degradation process thermally activated under multivibration excitation of the passivated dangling bonds at the interface. Next, we finally develop a complete modeling for NMOS and PMOS devices that is transferred from DC acceleratin
gregarious
发表于 2025-3-23 02:25:11
Physics-Based Modeling of Hot-Carrier Degradationkage and the strong localization of hot-carrier damage. Our model is linked and compared with other approaches to HCD simulations. Special attention is paid to the importance of the particular model ingredients, such as competing mechanisms of the Si–H bond dissociation, electron–electron scattering
闹剧
发表于 2025-3-23 06:30:26
http://reply.papertrans.cn/43/4285/428429/428429_10.png