Concerto
发表于 2025-3-28 16:56:13
Recovery from Hot Carrier Induced Degradation Through Temperature Treatmenther thick gate oxide and long channel which assures that mainly interface traps are created through the HC stress. We analyze the time and temperature dependence of the recovery of interface traps after HC stress using models from literature. The data is fairly consistent with the assumption of inte
critic
发表于 2025-3-28 20:27:36
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熄灭
发表于 2025-3-29 02:50:17
Channel Hot Carriers in SiGe and Ge pMOSFETsode is of relevance for n-channel devices, while it is often neglected for p-channel devices whose reliability is typically limited by Negative Bias Temperature Instability (NBTI). However, for Ge-based p-channel, hot carrier effects are expected to worsen due to higher hole mobility and reduced cha
丰满中国
发表于 2025-3-29 04:44:38
Channel Hot Carrier Degradation and Self-Heating Effects in FinFETson is at low vertical electric field stress (V. ∼ V./2) due to the interface degradation by hot carriers, while cold/hot carrier injection to the oxide bulk defect dominates at the high vertical field stress condition (V. = V.). In short channel devices, however, the most degraded condition is at hi
Paleontology
发表于 2025-3-29 08:35:36
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农学
发表于 2025-3-29 13:03:06
Compact Modelling of the Hot-Carrier Degradation of Integrated HV MOSFETsMOSFETs embedded in smart-power integrated circuits. After introducing the basic functions and structure of those devices, we touch upon the practical aspects of the evaluation of their resilience to hot-carrier degradation, with particular reference to the undesired self-heating effect. A short rev
忙碌
发表于 2025-3-29 17:23:02
Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistorses has come to the forefront due to its suitability for multiple applications ranging from high-performance analog to millimeter-wave applications. Hot-carrier induced reliability degradation mechanism is one of the primary issues that strongly defines the safe-operating area of a SiGe HBT device an
acheon
发表于 2025-3-29 22:56:09
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两种语言
发表于 2025-3-30 01:12:00
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NAVEN
发表于 2025-3-30 05:25:18
Reliability Simulation Models for Hot Carrier Degradationracterization and reliability assessment in advanced CMOS technologies, Proceedings of the ESSDERC, 2010, pp. 64–72), circuit reliability simulation is becoming increasingly important. To enable reliability simulation, reliability simulation models are a prerequisite. These simulation models are oft