FUME 发表于 2025-3-27 00:52:09

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Genistein 发表于 2025-3-27 04:49:37

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Thymus 发表于 2025-3-27 08:06:36

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LAY 发表于 2025-3-27 13:07:09

Achim Seidel,Bernhard Wichtization problems. Considering that the convergence and diversity of the population are two important indicators to measure the performance of the algorithm, a many-objective evolutionary algorithm with threshold elite selection strategy (MaOEA-TES) are proposed in this paper. The algorithm adopts th

序曲 发表于 2025-3-27 17:37:20

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果核 发表于 2025-3-27 18:39:26

Introduction,r the next decade in growth areas like renewable energy, e-mobility, or industry. A key approach for reducing the system size is increasing the switching frequency. While this is very effective in shrinking down the size of passives, higher dynamic losses lead to more cooling effort. In recent years

流眼泪 发表于 2025-3-28 01:10:47

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Epithelium 发表于 2025-3-28 05:41:16

Gate Drivers Based on High-Voltage Charge Storing (HVCS),charge by increasing the voltage level at the capacitor. A size reduction by ∼70% could be achieved lowering the integration cost or even might enable an onchip integration of the capacitor. This brings many advantages in terms of miniaturization, switching speed, and robustness. Three options for H

不可思议 发表于 2025-3-28 07:55:39

Gate Drivers Based on High-Voltage Energy Storing (HVES),r to achieve a resonant behavior. The integrated inductor can be placed on top of the buffer capacitor without area penalty. This way, HVES enables fast and energy-efficient switching of discrete GaN transistors without the need of an external buffer capacitor. HVES offers several design scenarios,

和音 发表于 2025-3-28 12:29:15

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查看完整版本: Titlebook: Highly Integrated Gate Drivers for Si and GaN Power Transistors; Achim Seidel,Bernhard Wicht Book 2021 The Editor(s) (if applicable) and T