庄严 发表于 2025-3-25 06:30:16

ive concepts including theory and design guidelines.Describe.This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC des

pulmonary-edema 发表于 2025-3-25 09:35:57

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设想 发表于 2025-3-25 14:47:11

Gate Drivers Based on High-Voltage Charge Storing (HVCS),ts are presented. To maintain a permanently turned on gate driver, various charge pump concepts are compared. Based on a design guideline, an experimental gate driver output stage with HVCS is implemented that delivers a peak gate current of 2.6 A at a maximum driver output voltage of 15 V.

glans-penis 发表于 2025-3-25 17:16:43

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惩罚 发表于 2025-3-25 21:21:56

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packet 发表于 2025-3-26 00:43:42

Conclusion,hree-level gate drive scheme. Applied to a large gate loop, formed by a distance of 25 cm between driver and power transistor (600 nH gate loop inductance), a specifically adapted driver shows a quick turn-on with very low overshoot as compared to a conventional gate driver circuit.

intrigue 发表于 2025-3-26 04:53:41

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forecast 发表于 2025-3-26 10:39:29

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Highbrow 发表于 2025-3-26 15:26:14

Achim Seidel,Bernhard Wichtresult, new terminology is appearing at a phenomenal rate. This sourcebook provides an introduction to artificial intelligence and expert systems, it provides brief definitions, it includes brief descriptions of software products, and vendors, and notes leaders in the field. Extensive support materi

窝转脊椎动物 发表于 2025-3-26 19:39:51

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查看完整版本: Titlebook: Highly Integrated Gate Drivers for Si and GaN Power Transistors; Achim Seidel,Bernhard Wicht Book 2021 The Editor(s) (if applicable) and T