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发表于 2025-3-21 19:48:11
书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0427035<br><br> <br><br>书目名称Highly Integrated Gate Drivers for Si and GaN Power Transistors读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0427035<br><br> <br><br>
蜿蜒而流
发表于 2025-3-21 22:03:49
Book 2021s robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and
可转变
发表于 2025-3-22 04:26:11
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Obedient
发表于 2025-3-22 06:22:37
Highly Integrated Gate Drivers for Si and GaN Power Transistors978-3-030-68940-7
笨拙的你
发表于 2025-3-22 10:02:13
Introduction,one reason that pushes the trend towards higher integration levels of gate drivers. Especially, in applications with a large number of power switches, gate drivers contribute significantly to the circuit board volume. Highly integrated GaN half-bridges including the gate driver circuit in a single p
Vertebra
发表于 2025-3-22 13:52:41
Gate Drivers Based on High-Voltage Energy Storing (HVES), 11 nC gate charge from integrated buffer capacitors (no external components), suitable for nearly all commercially available GaN transistors. The chapter also contains a thorough analysis of HVES in comparison to the conventional setup and to HVCS.
轻信
发表于 2025-3-22 19:55:25
rom numerous books, journals, and authorities in the field of artificial intelligence and expert systems. I hope this compilation of information will help clarify the terminology for artificial intelligence and expert systems‘ activities. Your comments, revisions, or questions are welcome. V. Daniel Hunt Spri978-1-4612-9388-0978-1-4613-2261-0
Adulate
发表于 2025-3-22 23:11:42
Achim Seidel,Bernhard Wichtrom numerous books, journals, and authorities in the field of artificial intelligence and expert systems. I hope this compilation of information will help clarify the terminology for artificial intelligence and expert systems‘ activities. Your comments, revisions, or questions are welcome. V. Daniel Hunt Spri978-1-4612-9388-0978-1-4613-2261-0
white-matter
发表于 2025-3-23 01:59:19
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PAEAN
发表于 2025-3-23 09:07:51
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