到来
发表于 2025-3-21 19:06:59
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Arbitrary
发表于 2025-3-21 20:25:00
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Ptosis
发表于 2025-3-22 03:46:05
Physics and Modeling of Heterojunction Bipolar Transistorshe emitter region, without losing too much current gain. This is of great importance for the realization of high-frequency bipolar transistors, since the extremely thin base widths of these devices require large doping concentrations in order to obtain reasonable values of base resistance and punchthrough voltage.
虚假
发表于 2025-3-22 06:14:06
Physics and Modeling of Bipolar Junction Transistorspact models. On the basis of these results, the most prominent compact models for large-signal and small-signal operation will be considered, together with a presentation of parameter extraction procedures.
ARC
发表于 2025-3-22 09:00:13
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有说服力
发表于 2025-3-22 16:09:26
Book 2003s of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: • Time-dependent large-signal quantities a
dagger
发表于 2025-3-22 20:00:12
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感激小女
发表于 2025-3-22 23:11:42
them. The proposed techniques apply to both combinational and sequential circuits and to circuits that contain a mix of control and datapath logic. In many applications, the degree of resilience often varies depending on the application context or the dataset being processed. In such cases, it is de
散步
发表于 2025-3-23 02:15:17
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Palpate
发表于 2025-3-23 07:31:36
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