平庸的人或物 发表于 2025-3-26 21:15:51

Semiconductor Physics Required for Bipolar-Transistor Modelinglacement (or electric flux density) ., the magnetic field . and the magnetic induction (or magnetic flux density) .; the vector . describes the electric current density due to moving charges, and ρ describes the charge density.

Mortar 发表于 2025-3-27 02:57:35

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Femish 发表于 2025-3-27 07:43:20

Physics and Modeling of Heterojunction Bipolar Transistorsthe emitter region exceeds the bandgap in the base region (.. > ..) fewer carriers will be injected into the emitter at a given transfer current density in comparison with a conventional transistor [.,.]: the current gain increases according to . as long as recombination in the base layer is negligi

不足的东西 发表于 2025-3-27 13:01:04

Noise Modelingelectronic devices. Generally we may distinguish between shot noise, due to fluctuations of the current associated with directed carrier motion, for example, caused by an applied electric field, and thermal noise (also termed diffusion noise or velocity fluctuation noise), due to the thermal motion

竞选运动 发表于 2025-3-27 15:07:01

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osteocytes 发表于 2025-3-27 18:37:10

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乞讨 发表于 2025-3-27 22:07:13

978-3-642-63205-1Springer-Verlag Berlin Heidelberg 2003

损坏 发表于 2025-3-28 03:15:10

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无瑕疵 发表于 2025-3-28 08:56:44

ApplicationsIn this chapter, four important applications of high-frequency bipolar transistors — ECL digital circuits, high-speed optical data transmission systems, RF circuits and BiCMOS circuits — are briefly considered.

FER 发表于 2025-3-28 12:47:48

https://doi.org/10.1007/978-3-642-55900-6CMOS; Modulation; bipolar junction transistor; drift transistor; heterojunction bipolar transistor; integ
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查看完整版本: Titlebook: High-Frequency Bipolar Transistors; Michael Reisch Book 2003 Springer-Verlag Berlin Heidelberg 2003 CMOS.Modulation.bipolar junction trans