postpartum 发表于 2025-3-21 18:43:00
书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0389122<br><br> <br><br>书目名称Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0389122<br><br> <br><br>EXALT 发表于 2025-3-21 23:30:35
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Excitonic Complexes in Wide-Gap II-VI Semiconductorsh allows for the development of comprehensive term schemes for neutral-impurity-exciton complexes in II–VI’s. Mainly three types of excited states exist for bound-exciton complexes: (i) states which are described through electronic excitation of one electron or hole, while the other particles involv有机体 发表于 2025-3-22 11:27:40
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Beverley Radcliffe,Jane Shackmanublished during the last years in this field dealing especially with transition metals in II–VI-compounds. The reader is refered to these publications. It is therefore not the aim of this paper to cover the field of impurities in II–VIs entirely, but to discuss some genanagen 发表于 2025-3-23 00:48:22
https://doi.org/10.1007/978-1-4615-1559-3 laser diodes for high density memory and printing systems, one must rely on the wider-bandgap materials. Wide gap II–VI compounds, such as ZnSe, ZnS and ZnSSe, have long been expected as candidates for the purposes.Oscillate 发表于 2025-3-23 03:07:46
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Inclusive Education in Trinidad and Tobago,h allows for the development of comprehensive term schemes for neutral-impurity-exciton complexes in II–VI’s. Mainly three types of excited states exist for bound-exciton complexes: (i) states which are described through electronic excitation of one electron or hole, while the other particles involv