来就得意 发表于 2025-3-26 22:17:27
http://reply.papertrans.cn/39/3892/389122/389122_31.pngForage饲料 发表于 2025-3-27 04:20:33
Recent Development Trends in Thin Film Electroluminescent Displaysunds. The thin film electroluminescent structure, schematically shown in fig. 1, is almost ideal for a flat panel display. Light is generated in a less than 2 μm thick thin film stack, which is deposited on a glass substrate. The light emitting film is deposited between two insulating films, and theCAND 发表于 2025-3-27 09:12:05
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Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSeort agents. The ZnSe layers exhibited a p-type conductivity up to 50 (Ωcm). and a net carrier concentration of 4×10. cm. together with a Hall mobility of 100 cm. /Vs at room temperature. These values are the highest ones reported so far.averse 发表于 2025-3-27 14:43:19
Prospects for II-VI Heterojunction Light Emitting Diodesy, which is the subject of this paper, is to join a p-type II–VI to an n-type II–VI to form a heterojunction (HJ). The HJ approach has been tried for over 20 years and has been quite successful in making pn junctions in these materials.轻浮女 发表于 2025-3-27 18:25:01
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The Growth of Thin Layers by MOCVD of Wide Band Gap II-VI Compounds elements (O, S, Se, Te) has been recognised for a long time.. These materials are known to have band gaps which are compatible with emission in the visible region of the electromagnetic spectrum and to exhibit non-linear optical effects.. These properties are currently being investigated in applicaMagnificent 发表于 2025-3-28 07:10:07
Optical Studies of ZnXTe(X=Mn,Hg) Alloysct fundamental transition. Many different ternary and quaternary solid solutions based upon ZnTe are prepared by alloying with another II–VI compound like CdTe, CdSe, HgTe... or with a VI–VII material like MnSe or MnTe. In the present paper, we shall focus particularly on the ternary alloys Hg. Zn.neologism 发表于 2025-3-28 14:02:53
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