implicate
发表于 2025-3-21 17:58:54
书目名称Gate Dielectrics and MOS ULSIs影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0380921<br><br> <br><br>书目名称Gate Dielectrics and MOS ULSIs读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0380921<br><br> <br><br>
我还要背着他
发表于 2025-3-21 22:59:32
http://reply.papertrans.cn/39/3810/380921/380921_2.png
circumvent
发表于 2025-3-22 00:49:37
http://reply.papertrans.cn/39/3810/380921/380921_3.png
浓缩
发表于 2025-3-22 06:17:35
MOS Fielid-Effect Transistor,In this chapter, we shall present the MOSFET theory and issues that relate to scaling and integration.
negotiable
发表于 2025-3-22 12:47:08
http://reply.papertrans.cn/39/3810/380921/380921_5.png
搏斗
发表于 2025-3-22 12:55:53
http://reply.papertrans.cn/39/3810/380921/380921_6.png
搏斗
发表于 2025-3-22 21:08:34
https://doi.org/10.1007/978-3-322-92285-4n (.: ≥ 107 transistors on a chip) circuits such as microprocessors and semiconductor memories. As the name implies, the MIS transistor consists of a semiconductor substrate and a top gate electrode, between which an insulating .. of thickness d is formed (Fig. 1.1). Source and drain junctions are f
abolish
发表于 2025-3-22 21:42:00
https://doi.org/10.1007/978-3-531-92693-3IS transistor (Fig. 1.1), the MIS capacitor has only two terminals, and is the simplest and most useful device in the study of semiconductor surfaces and gate dielectrics . In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken
巨硕
发表于 2025-3-23 01:22:39
http://reply.papertrans.cn/39/3810/380921/380921_9.png
横条
发表于 2025-3-23 09:11:23
Takashi HoriThe reader will obtain updated information for not only deep-submicron ULSIs having nanometer-range ultrathin gate- dielectrics but also nitrided oxides from this first book presenting them in detail