花束
发表于 2025-3-23 12:26:46
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Overthrow
发表于 2025-3-23 16:23:41
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散布
发表于 2025-3-23 19:00:26
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aggressor
发表于 2025-3-24 01:30:38
0172-5734 rided oxides from this first book presenting them in detail .Gate Dielectrics and MOS ULSIs .provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior qu
骗子
发表于 2025-3-24 03:43:08
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合乎习俗
发表于 2025-3-24 10:22:21
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auxiliary
发表于 2025-3-24 13:00:49
Thermally Nitrided Oxides: ,,4+ 16 Mbit samples to mass production. Some of them, especially in Japan, rushed to replace thermal gate-SiO{2in}, with nitrided oxides . This may mean the first event since the birth of MOS devices in 1960, from the standpoint that MIS products actually use a silicon-dielectric interface other than the conventional Si-SiO. interface.
壕沟
发表于 2025-3-24 16:13:54
Book 1997e dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g.,
FLAG
发表于 2025-3-24 20:18:30
MIS Structure,and gate dielectrics . In this chapter, we shall consider MIS theory and its applications. In most cases, a p-type semiconductor will be taken as an example, since it is employed in n-channel MOSFETs.
Osteoporosis
发表于 2025-3-25 02:53:44
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